april 2009 fdp8n60zu / fd pf8n60zut n-channel mosfet ?2009 fairchild semiconductor corporation fdp8n60zu / FDPF8N60ZUT rev. a www.fairchildsemi.com 1 unifet tm fdp8n60zu / FDPF8N60ZUT n-channel mosfet, frfet 600v, 6.5a, 1.35 features ?r ds(on) = 1.15m ( typ.) @ v gs = 10v, i d = 3.25a ? low gate charge ( typ. 20nc) ? low c rss ( typ. 10pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? rohs compliant description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has be en especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power s upplies and active power factor correction. to-220f fdpf series g s d to-220 fdp series g s d g s d g s d mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter fdp8n60zu FDPF8N60ZUT units v dss drain to source voltage 600 v v gss gate to source voltage 30 v i d drain current -continuous (t c = 25 o c) 6.5 6.5* a -continuous (t c = 100 o c) 3.9 3.9* i dm drain current - pulsed (note 1) 26 26* a e as single pulsed avalanche energy (note 2) 420 mj i ar avalanche current (note 1) 6.5 a e ar repetitive avalanche energy (note 1) 13.5 mj dv/dt peak diode recovery dv/dt (note 3) 20 v/ns p d power dissipation (t c = 25 o c) 135 34.5 w - derate above 25 o c1.050.28w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter fdp8n60zu FDPF8N60ZUT units r jc thermal resistance, junction to case 0.95 3.6 o c/w r cs thermal resistance, case to sink typ. 0.5 - r ja thermal resistance, junction to ambient 62.5 62.5 *drain current limited by maximum junction temperature
fdp8n60zu / fd pf8n60zut n-channel mosfet fdp8n60zu / FDPF8N60ZUT rev. a www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fdp8n60zu fdp8n60zu to-220 - - 50 FDPF8N60ZUT FDPF8N60ZUT to-220f - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t j = 25 o c 600 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.7-v/ o c i dss zero gate voltage drain current v ds = 600v, v gs = 0v - - 25 a v ds = 480v, t c = 125 o c - - 250 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 10 a v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 3.25a - 1.15 1.35 g fs forward transconductance v ds = 40v, i d = 3.25a - 7 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 950 1265 pf c oss output capacitance - 110 150 pf c rss reverse transfer capacitance - 10 15 pf q g total gate charge at 10v v ds = 480v, i d = 6.5a v gs = 10v (note 4) -2026nc q gs gate to source gate charge - 5 - nc q gd gate to drain ?miller? charge - 8 - nc t d(on) turn-on delay time v dd = 300v, i d = 6.5a r g = 25 , v gs = 10v (note 4) -2050ns t r turn-on rise time - 30 70 ns t d(off) turn-off delay time - 55 120 ns t f turn-off fall time - 35 80 ns i s maximum continuous drain to source diode forward current - - 6.5 a i sm maximum pulsed drain to source diode forward current - - 26 a v sd drain to source diode forward voltage v gs = 0v, i sd = 6.5a - - 1.6 v t rr reverse recovery time v gs = 0v, i sd = 6.5a di f /dt = 100a/ s -40-ns q rr reverse recovery charge - 42 - nc notes: 1: repetitive rating: pulse width limi ted by maximum junction temperature 2: l = 20mh, i as = 6.5a, v dd = 50v, r g = 25 , starting t j = 25c 3: i sd 6.5a, di/dt 200a/ s, v dd bv dss , starting t j = 25c 4: essentially independent of operating temperature typical characteristics
fdp8n60zu / fd pf8n60zut n-channel mosfet fdp8n60zu / FDPF8N60ZUT rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 2468 0.1 1 10 20 25 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test v gs ,gate-source voltage[v] i d ,drain current[a] 0.1 1 10 20 0.1 1 10 20 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v v ds ,drain-source voltage[v] i d ,drain current[a] 036912 1.0 1.1 1.2 1.3 1.4 1.5 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [m ], drain-source on-resistance i d , drain current [a] 01234 1 10 100 200 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 30 0 500 1000 1500 2000 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 5 10 15 20 0 2 4 6 8 10 *note: i d = 6.5a v ds = 150v v ds = 300v v ds = 480v v gs , gate-source voltage [v] q g , total gate charge [nc]
fdp8n60zu / fd pf8n60zut n-channel mosfet fdp8n60zu / FDPF8N60ZUT rev. a www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. maximum safe operating area vs. temperature - FDPF8N60ZUT figure 9. maximum drain current vs. case temperature figure 10. transient thermal response curve - FDPF8N60ZUT -100 -50 0 50 100 150 200 0.88 0.92 0.96 1.00 1.04 1.08 1.12 1.16 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c] 1 10 100 1000 0.01 0.1 1 10 50 20 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 2 4 6 8 i d , drain current [a] t c , case temperature [ o c ] limited by package 10 -5 10 -4 10 -3 10 -2 10 -1 11010 2 0.01 0.1 1 5 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 3.6 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [z jc ] rectangular pulse duration [sec] 0.005 t 1 p dm t 2
fdp8n60zu / fd pf8n60zut n-channel mosfet fdp8n60zu / FDPF8N60ZUT rev. a www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
fdp8n60zu / fd pf8n60zut n-channel mosfet fdp8n60zu / FDPF8N60ZUT rev. a www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- d = g ate p ulse w idth g ate pulse period --------------------------
fdp8n60zu / fd pf8n60zut n-channel mosfet fdp8n60zu / FDPF8N60ZUT rev. a www.fairchildsemi.com 7 mechanical dimensions to-220 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 1.27 0.10 ?3.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?0.05 0.50 +0.10 ?0.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ]
fdp8n60zu / fd pf8n60zut n-channel mosfet fdp8n60zu / FDPF8N60ZUT rev. a www.fairchildsemi.com 8 mechanical dimensions to-220f (7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 ?3.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?0.05 dimensions in millimeters
fdp8n60zu / fd pf8n60zut n-channel mosfet fdp8n60zu / FDPF8N60ZUT rev. a www.fairchildsemi.com 9 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes wi thout further notice to any products herein to improve reliability, function, or desi gn. fairchild does not assume any liability ar ising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights , nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support de vices or systems without the express written approval of fai rchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms auto-spm? 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